PART |
Description |
Maker |
MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆
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ON Semiconductor Motorola, Inc Motorola Mobility Holdings, Inc.
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MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTA1N60E |
FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
MTD2955E MTD2955ET4 |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ON Semiconductor
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MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
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MTD6N15 ON2513 MTD6N15-D |
Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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